(EB) denotes a magnetic coupling phenomenon at ferromagnetic (FM)/antiferromagnetic (AF) interfaces with strong implications in modern spintronics. It manifests most strikingly in a shift of the FM hysteresis along the magnetic field axis. Although the theoretical details of this unidirectional anisotropy are still unclear, it turns out, that a net AF interface magnetization is essential for the EB and allows for extrinsic control of the effect. Here, this control is realized in a fully electric manner with the help of novel artificial heterostructures. They combine thin films of magnetoelectric insulators with metallic FM layers grown by MBE and sputtering methods. The magnetoelectric material gives rise to electric induced interface magnetization which couples to the adjacent FM film. Hence, electric tuning of the EB and a new family of spintronic devices become feasible.
